S12023-02-01 Silicon Avalanche Photodiode Infrared Low-bias Operation

S12023-02-01 Silicon Avalanche Photodiode Infrared Low-bias Operation This silicon avalanche photodiode (Si APD) is designed for the near-infrared range (800 nm band) and operates at low voltages of 200 V or less. It is suitable for applications such as optical rangefinders and free-space optical communication. Features: ・Stable operation at low bias voltage ・Fast response speed ・High sensitivity and low noise Specification: Wavelength of peak sensitivity (typical) 800 nm